IRF634A
Samsung
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Advanced power mosfet.
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IRF634 - N-CHANNEL Power MOSFET
(STMicroelectronics)
IRF634 IRF634FP
N-channel 250V - 0.38Ω - 8A TO-220 /TO-220FP Mesh Overlay™ Power MOSFET
General features
Type IRF634 IRF634FP
VDSS 250V 250V
RDS(o.
IRF634 - Power MOSFET
(International Rectifier)
.
IRF634 - Advanced Power MOSFET
(Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extende.
IRF634 - Power MOSFET
(Vishay)
.vishay.
IRF634
Vishay Siliconix
Power MOSFET
D TO-220AB
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs .
IRF634 - N-CHANNEL MOSFET
(BLUE ROCKET ELECTRONICS)
IRF634
Rev.E Mar.-2016
DATA SHEET
/ Descriptions TO-220 N MOS 。N-CHANNEL MOSFET in a TO-220 Plastic Package.
/ Features
,,。 Low gate charge, l.
IRF634 - N-channel mosfet transistor
(Inchange Semiconductor)
MOSFET
IRF634
N-channel mosfet transistor
INCHANGE
Features
With TO-220 package Simple drive requirements Fast switching V DSS=250V; RDS(ON)0.45 ;.
IRF634A - Advanced Power MOSFET
(Fairchild Semiconductor)
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extende.
IRF634A - Advanced Power MOSFET
(ART CHIP)
FEATURES
z Avalanche Rugged Technology z Rugged Gate Oxide Technology z Lower Input Capacitance z Extended Safe Operating Area z Lower Leakage Current.
IRF634B - N-Channel BFET MOSFET
(Fairchild Semiconductor)
IRF634B/IRFS634B
November 2001
IRF634B/IRFS634B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transi.
IRF634FP - N-CHANNEL Power MOSFET
(STMicroelectronics)
IRF634 IRF634FP
N-channel 250V - 0.38Ω - 8A TO-220 /TO-220FP Mesh Overlay™ Power MOSFET
General features
Type IRF634 IRF634FP
VDSS 250V 250V
RDS(o.
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