IRF9Z24N Datasheet - International Rectifier

IRF9Z24N, Power MOSFET

PD -9.1484B IRF9Z24N HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel.
l l D VDSS = -55V RDS(on) = 0.

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IRF9Z24N_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRF9Z24N

Manufacturer:

International Rectifier

File Size:

109.07 KB

Description:

Power MOSFET

Features

* ) M IN 1 2 3 L E A D A S S IG N M E N T S 1 - G A TE 2 - D R AIN 3 - SO URCE 4 - D R AIN 1 4 . 0 9 (.5 5 5 ) 1 3 . 4 7 (.5 3 0 ) 4 . 0 6 (. 1 6 0 ) 3 . 5 5 (. 1 4 0 ) 3X 1 .4 0 (. 0 5 5 ) 1 .1 5 (. 0 4 5 ) 0 . 9 3 ( .0 3 7 ) 3 X 0 . 6 9 ( .0 2 7 ) 0 .3 6 (. 0 1 4 ) M B A M 3X 0 . 5 5 (. 0 2

Applications

* The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings

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IRF9Z24N Power MOSFET International Rectifier

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