Part number: IRF9Z24N
Manufacturer: International Rectifier
File Size: 109.07KB
Download: 📄 Datasheet
Description: Power MOSFET
Gate Charge Test Circuit
IRF9Z24N
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
+
Circuit Layout Considerations
* Low Stray Inductance
* Ground Plane
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to a.
l l
D
VDSS = -55V RDS(on) = 0.175Ω
G
ID = -12A
S
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching.
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