IRF9Z24NS

Power MOSFET

International Rectifier

IRF9Z24NS General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the des.

IRF9Z24NS Datasheet (173.65 KB)

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Part number:

IRF9Z24NS

Manufacturer:

International Rectifier

File Size:

173.65 KB

Description:

Power mosfet.
l Advanced Process Technology l Surface Mount (IRF9Z24NS) l Low-profile through-hole (IRF9Z24NL) l 175°C Operating Temperature l P-Channel G l F.

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IRF9Z24NS Power MOSFET International Rectifier

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IRF9Z24NS General Description

Datasheet Details

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