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IRF9Z24L Datasheet - International Rectifier

IRF9Z24L Power MOSFET

l l D VDSS = -60V RDS(on) = 0.28Ω G ID = -11A S Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Pow.

IRF9Z24L_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRF9Z24L

Manufacturer:

International Rectifier

File Size:

311.02 KB

Description:

Power mosfet.

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IRF9Z24L IRF9Z24L Power MOSFET International Rectifier

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