Datasheet4U Logo Datasheet4U.com

IRF7328 - HEXFET Power MOSFET

Datasheet Summary

Description

New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

📥 Download Datasheet

Datasheet preview – IRF7328

📁 Similar Datasheet

  • IRF732 - N-Channel Mosfet Transistor (Inchange Semiconductor)
  • IRF732 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • IRF730 - PowerMOS transistor (NXP)
  • IRF730 - N-Channel Power MOSFET (STMicroelectronics)
  • IRF730 - N-Channel Power MOSFET (Intersil Corporation)
  • IRF730 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • IRF730 - N-Channel MOSFET (NTE)
  • IRF730 - Power MOSFET (Vishay)
  • IRF730 - N-Channel Power MOSFET (nELL)
  • IRF730 - N-Channel MOSFET Transistor (Inchange Semiconductor)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD -94000 IRF7328 HEXFET® Power MOSFET q q q q Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Available in Tape & Reel VDSS -30V RDS(on) max 21mΩ@VGS = -10V 32mΩ@VGS = -4.5V ID -8.0A -6.8A Description New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications. S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 3 6 4 5 T o p V ie w SO-8 www.DataSheet4U.
Published: |