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IRF7328PBF - Power MOSFET

IRF7328PBF Description

lÿÿTrench Technology lÿÿUltra Low On-Resistance lÿ Dual P-Channel MOSFET lÿAvailable in Tape & Reel lÿ Lead-Free VDSS -30V PD - 95196A IRF7328PbF .
New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silico.

IRF7328PBF Applications

* S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Drain-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Maximum Power Dissi

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Power MOSFET International Rectifier
International Rectifier IRF7328PBF-like datasheet