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INTEGRATED CIRCUITS NE/SA/SE5532/5532A Internally-compensated dual low noise operational amplifier Product specification IC11 Data Handbook 1997 Sept

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NE5532, SA5532, SE5532, NE5532A, SE5532A Internally Compensated Dual Low Noise Operational Amplifier The 5532 is a dual high-performance low noise op

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PN8570 Chipown Internal BJT Low Standby-Power Quasi-Resonant Primary-side Converter General description The PN8570 consists of a Low Standby-Power

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Order this document by MC1436/D MC1436, C High Voltage, Internally Compensated Operational Amplifiers The MC1436, C was designed for use as a summin

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NE5532, SA5532, SE5532, NE5532A, SE5532A Internally Compensated Dual Low Noise Operational Amplifier The 5532 is a dual high-performance low noise op

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LESHAN RADIO COMPANY, LTD. General Description The LR358/LR358D consists of two independent,high gain and internally frequency compensated operationa

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INTEGRATED CIRCUITS NE/SA/SE5532/5532A Internally-compensated dual low noise operational amplifier Product specification IC11 Data Handbook 1997 Sept

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INTERNAL THREADED END-CONNECTION LINEAR VALVE PN16 PRODUCT DATA V5011S FEATURES      Brass body with internal threaded end connections Low seat

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FLM3439-18F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 43.0dBm (Typ.) • High Gain: G1dB = 10.5dB (Typ.) • High PAE: hadd = 37%

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NT35510 – General Specification One-chip Driver IC with internal GRAM for 16.7M colors 480RGB x 864 a-Si TFT LCD with CPU / RGB / MIPI / MDDI Interfac

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3.96 mm Pitch Miniature Connectors for Internal Power Supplies (UL,C-UL and TÜV Listed) DF7 Series Complete Locking Function Completely enclosed lock

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ELM1314-30F/001 Ku-Band Internally Matched FET FEATURES •High Output Power: P1dB=44.5dBm(typ.) •High Gain: G1dB=5.5dB(typ.) •High PAE: ηadd=22%(typ.)

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NJW4138 Internal 45V MOSFET Switching Regulator IC for Capacitor Charge Boost Converter ■FEATURES ●Current Mode Control ●External Clock Synchroniz

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U. R L. O 1639 EC #E7 Fi le I GN ZE D TO-220 Isolated MT2 MT1 T Internally Triggered Triacs (4 A to 15 A) E3 General Description Teccor’s Q

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INTEGRATED CIRCUITS NE/SA/SE5532/5532A Internally-compensated dual low noise operational amplifier Product specification IC11 Data Handbook 1997 Sept

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EIB1415-4P UPDATED 06/14/06 14.40-15.35GHz 4W Internally Matched Power FET FEATURES • • • • • • • 14.40-15.35 GHz Bandwidth Input/Output Impedance M

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FLM1011-8F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm (Typ.) High Gain: G1dB = 7.0dB (Typ.) High PAE:

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