J133 Datasheet | Specifications & PDF Download

DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ133, 2SJ133-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES • Gate drive available at logic level (

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DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ133, 2SJ133-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES • Gate drive available at logic level (

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DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ133, 2SJ133-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES • Gate drive available at logic level (

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ13333/D Designer's SWITCHMODE Series NPN Silicon Power Transistor The MJ13333 trans

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ13333/D Designer's SWITCHMODE Series NPN Silicon Power Transistor The MJ13333 trans

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isc Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) · Reversed Biased SOA with Inductive Loa

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) ·High Switching Speed ·Minimum Lot-to-Lot

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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robu

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 500V(Min) ·High Switching Speed ·Minimum Lot-to-Lot

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DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ133, 2SJ133-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES • Gate drive available at logic level (

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) ·High Switching Speed ·Minimum Lot-to-Lot

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min) ·High Switching Speed ·Minimum Lot-to-Lot

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SSM3J133TU TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J133TU ○ Power Management Switch Applications • 1.5V drive • Low O

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