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N R N-CHANNEL MOSFET JCS740C MAIN CHARACTERISTICS Package ID 10 A VDSS 400 V Rdson（@Vgs=10V） 0.54 Ω Qg 19.7nC z z z UPS APPLICATI

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N N-CHANNEL MOSFET R JCS4N95A MAIN CHARACTERISTICS ID 4.0 A VDSS 950 V Rdson（Vgs=10V） 4.5Ω -Max Qg-Typ 14.5nC Package .  LED APPLIC

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N R N-CHANNEL MOSFET JCS2N65C MAIN CHARACTERISTICS ID 2.0 A VDSS 650 V Rdson（Vgs=10V） 5.0 Ω Qg 8.0 nC Package    LED APPLICATIONS  High

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N N-CHANNEL MOSFET R JCS3205H MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ   UPS 110 A 55 V 8 mΩ 78nC APPLICATIONS  H

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JCS60N10I N N-CHANNEL MOSFET MAIN CHARACTERISTICS Package ID VDSS R(-d@sVogns=-1m0aVx） Qg-typ  DC/DC      Rdson    dv/dt 

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N R N-CHANNEL MOSFET JCS740C MAIN CHARACTERISTICS Package ID 10 A VDSS 400 V Rdson（@Vgs=10V） 0.54 Ω Qg 19.7nC z z z UPS APPLICATI

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO- 126 FEATURES Low Freq

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N N- CHANNEL MOSFET R JCS640H MAIN CHARACTERISTICS ID 18A VDSS 200 V Rdson-max （@Vgs=10V） 0.15Ω Qg-typ 27.5nC Package    UPS APP

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors 2SC4618 TRANSISTOR (NPN) FEATURES  High Voltage and Curre

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N N- CHANNEL MOSFET R JCS18N50H MAIN CHARACTERISTICS ID VDSS Rdson（@Vgs=10V） Qg 18 A 500 V 0.27Ω 50nC z z z UPS APPLICATIONS z High efficie

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N R N-CHANNEL MOSFET JCS1404 MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ   UPS 204 A 40 V 4 mΩ 106nC APPLICATIONS

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N R N-CHANNEL MOSFET JCS86N25T MAIN CHARACTERISTICS ID 86 A VDSS 250 V Rdson（Vgs=10V） -MAX 50mΩ Qg-Typ 123 nC Package  .  UPS

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R N N-CHANNEL MOSFET JCS630V/R/S/B/C/F MAIN CHARACTERISTICS Package ID VDSS Rdson （@Vgs=10V） Qg 9.0 A 200 V 0.4 Ω 22 nC z z z UPS APPLIC

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R N N-CHANNEL MOSFET JCS640 MAIN CHARACTERISTICS Package ID VDSS Rdson （@Vgs=10V） Qg z z z UPS 18.0 A 200 V 0.18Ω 47 nC APPLICATIONS z Hig

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO- 126 FEATURES Low Freq

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N R N-CHANNEL MOSFET JCS2N60 MAIN CHARACTERISTICS ID 2.0 A VDSS 600 V Rdson（@Vgs=10V） 5 Ω Qg 15.3 nC Package    LED APPLICATIONS  High

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 6  TRANSISTOR (PNP) )($785(6 z &RPSOHPHQWDU\ WR 6  z

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N N- CHANNEL MOSFET R JCS640H MAIN CHARACTERISTICS ID 18A VDSS 200 V Rdson-max （@Vgs=10V） 0.15Ω Qg-typ 27.5nC Package    UPS APP

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R JCS50N20T JCS50N20T MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ    UPS 50A 200 V 50mΩ 90nC APPLICATIONS  High fr

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