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N N- CHANNEL MOSFET R JCS18N50H MAIN CHARACTERISTICS ID VDSS Rdson（@Vgs=10V） Qg 18 A 500 V 0.27Ω 50nC z z z UPS APPLICATIONS z High efficie

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9018 TRANSISTOR (NPN) FEATURES z High Current Gain Bandwidt

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO- 126 FEATURES Low Freq

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JCS60N10I N N-CHANNEL MOSFET MAIN CHARACTERISTICS Package ID VDSS R(-d@sVogns=-1m0aVx） Qg-typ  DC/DC      Rdson    dv/dt 

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO- 126 FEATURES Low Freq

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors S9015 TRANSISTOR (PNP) FEATURES z High Total Power Dissipatio

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N R N-CHANNEL MOSFET JCS740C MAIN CHARACTERISTICS Package ID 10 A VDSS 400 V Rdson（@Vgs=10V） 0.54 Ω Qg 19.7nC z z z UPS APPLICATI

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N R N-CHANNEL MOSFET JCS2N65C MAIN CHARACTERISTICS ID 2.0 A VDSS 650 V Rdson（Vgs=10V） 5.0 Ω Qg 8.0 nC Package    LED APPLICATIONS  High

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N R N-CHANNEL MOSFET JCS4N60B MAIN CHARACTERISTICS Package ID 4.0 A VDSS 600 V Rdson（Vgs=10V） 2.4Ω Qg 18.1nC    LED APPLICATIO

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N R N-CHANNEL MOSFET JCS740C MAIN CHARACTERISTICS Package ID 10 A VDSS 400 V Rdson（@Vgs=10V） 0.54 Ω Qg 19.7nC z z z UPS APPLICATI

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R JCS50N20T JCS50N20T MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ    UPS 50A 200 V 50mΩ 90nC APPLICATIONS  High fr

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R N N-CHANNEL MOSFET JCS630V/R/S/B/C/F MAIN CHARACTERISTICS Package ID VDSS Rdson （@Vgs=10V） Qg 9.0 A 200 V 0.4 Ω 22 nC z z z UPS APPLIC

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N R N-CHANNEL MOSFET JCS630A MAIN CHARACTERISTICS Package ID 9.0 A VDSS 200 V Rdson（Vgs=10V） 0.4 Ω Qg 22 nC APPLICATIONS z High efficiency swit

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N R N-CHANNEL MOSFET JCS2N60 MAIN CHARACTERISTICS ID 2.0 A VDSS 600 V Rdson（@Vgs=10V） 5 Ω Qg 15.3 nC Package    LED APPLICATIONS  High

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N N- CHANNEL MOSFET R JCS13N50FT MAIN CHARACTERISTICS ID VDSS Rdson（@Vgs=10V） Qg 13 A 500 V 0.46Ω 37 nC z z z UPS APPLICATIONS z High effic

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N R N-CHANNEL MOSFET JCS4N65F MAIN CHARACTERISTICS Package ID 4.0 A VDSS 650 V Rdson（Vgs=10V） 2.8Ω Qg 27nC   LED APPLICATIONS  High effi

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N R N-CHANNEL MOSFET JCS7HN65C MAIN CHARACTERISTICS Package ID 7.0 A VDSS 650 V Rdson（@Vgs=10V） 1.35 Ω Qg 32 nC    LED APPLICATIONS  H

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N R N-CHANNEL MOSFET JCS1404 MAIN CHARACTERISTICS Package ID 204 A VDSS 40 V Rdson（@Vgs=10V） 4 mΩ z z UPS APPLICATIONS z High efficiency

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N R N-CHANNEL MOSFET JCS55N06CH MAIN CHARACTERISTICS Package ID 55 A VDSS 60 V Rdson（@Vgs=10V） 18 mΩ Qg 43nc  UPS APPLICATIONS  High freq

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R N N-CHANNEL MOSFET JCS7N65B MAIN CHARACTERISTICS Package ID VDSS Rdson （@Vgs=10V） Qg z z z UPS 7.0 A 650 V 1.3 Ω 25 nC APPLICATIONS z Hi

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