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JH Tech Datasheet, Features, Application

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Renesas Technology

RJH60F7ADPK - Silicon N Channel IGBT

RJH60F7ADPK Silicon N Channel IGBT High Speed Power Switching Features • High speed switching • Low on-state voltage • Fast recovery diode www.DataSh.
1.0 · rating-1
Zowie Technology

SRGC10JH - Fast Recovery Rectifier

ZOWIE Fast Recovery Rectifier SRGC10DH THRU SRGC10MH FEATURES * Halogen-free type * Compliance to RoHS product * GPRC (Glass passivated rectifier ch.
1.0 · rating-1
Renesas Technology

RJH60F4DPK - Silicon N Channel IGBT

RJH60F4DPK Silicon N Channel IGBT High Speed Power Switching Features • High speed switching • Low on-state voltage • Fast recovery diode www.DataShe.
1.0 · rating-1
Zowie Technology

RGF10JH - SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIER

RGF10AH THRU RGF10MH SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Amper.
1.0 · rating-1
Zowie Technology

RGF20JH - SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIER

RGF20AH THRU RGF20MH SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amper.
1.0 · rating-1
Zowie Technology

RGF30JH - SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIER

RGF30AH THRU RGF30MH SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amper.
1.0 · rating-1
Zowie Technology

EGP20JH - SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER

EGP20AH THRU EGP20MH SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes .
1.0 · rating-1
Zowie Technology

MBC08JH - Bridge Rectifier

ZOWIE Bridge Rectifier Preliminary MBC08JH THRU MBC08MH FEATURES * Halogen-free type * Internal structure with GPRC (glass passivated rectifier chip.
1.0 · rating-1
Zowie Technology

MBC10JH - Bridge Rectifier

ZOWIE Bridge Rectifier MBC10JH THRU MBC10MH FEATURES * Halogen-free type * Internal structure with GPRC (glass passivated rectifier chip) inside * C.
1.0 · rating-1
Zowie Technology

RGP10JH - SINTERED GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIER

RGP10AH THRU RGP10MH SINTERED GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere PP.
1.0 · rating-1
Zowie Technology

RGP20JH - SINTERED GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIER

RGP20AH THRU RGP20MH SINTERED GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes PP.
1.0 · rating-1
Zowie Technology

SEGC10JH - High Efficient Rectifier

ZOWIE SEGC10DH THRU SEGC10MH FEATURES * Halogen-free type * Compliance to RoHS product * GPRC (Glass passivated rectifier chip) inside * Glass passiva.
1.0 · rating-1
JH Tech

JH240 - 2-Wire RTD Transmitter

JH240 2-WIRE RTD TRANSMITTER FEATURES • • • • • • • For 100 ohm Platinum RTDs – Linearized Three-Wire Lead Resistance Compensation Low-Drift Input Am.
1.0 · rating-1
Semiconductor Technology

MJH16212 - NPN Silicon High Voltage Power Transistor

PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: MJH16212 PH: (561)283-4500 FAX: (561)286-8914 Webs.
1.0 · rating-1
Renesas Technology

RJH60C9DPD - Silicon N Channel IGBT

RJH60C9DPD Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in diode RENESAS Package code: PRSS.
1.0 · rating-1
Renesas Technology

RJH60D0DPK - Silicon N Channel IGBT

RJH60D0DPK Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in diode www.DataSheet4U.com Prel.
1.0 · rating-1
Renesas Technology

RJH60D1DPE - Silicon N Channel IGBT

RJH60D1DPE Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in diode www.DataSheet4U.com Prel.
1.0 · rating-1
Renesas Technology

RJH60D1DPP-M0 - Silicon N-Channel IGBT

RJH60D1DPP-M0 Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in diode www.DataSheet4U.com P.
1.0 · rating-1
Renesas Technology

RJH60D2DPE - Silicon N Channel IGBT

RJH60D2DPE Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in diode www.DataSheet4U.com Prel.
1.0 · rating-1
Renesas Technology

RJH60D2DPP-M0 - Silicon N Channel IGBT

RJH60D2DPP-M0 Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in diode www.DataSheet4U.com P.
1.0 · rating-1
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