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ZOWIE Ultrafast Efficient Rectifier UGC10DH THRU UGC10KH FEATURES * Halogen-free type * Compliance to RoHS product * GPRC (Glass passivated rectifie

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RJH60D2DPE Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in diode www.DataSheet4U.com Prel

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RJH60D3DPE Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in diode www.DataSheet4U.com Prel

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RJH60F4DPK Silicon N Channel IGBT High Speed Power Switching Features • High speed switching • Low on-state voltage • Fast recovery diode www.DataShe

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RJH60D0DPK Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in diode www.DataSheet4U.com Prel

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RJH60D1DPE Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in diode www.DataSheet4U.com Prel

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RJH60D1DPP-M0 Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in diode www.DataSheet4U.com P

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RJH60D2DPP-M0 Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in diode www.DataSheet4U.com P

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RJH60D5DPK Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in diode www.DataSheet4U.com Prel

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RJH60F0DPK Silicon N Channel IGBT High Speed Power Switching Features • High speed switching • Low on-state voltage • Fast recovery diode www.DataShe

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Preliminary Datasheet RJH60F5DPK Silicon N Channel IGBT High Speed Power Switching R07DS0055EJ0300 Rev.3.00 Nov 24, 2010 Features  Low collector

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RJH60F7ADPK Silicon N Channel IGBT High Speed Power Switching Features • High speed switching • Low on-state voltage • Fast recovery diode www.DataSh

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Preliminary Datasheet RJH60F6DPK Silicon N Channel IGBT High Speed Power Switching Features  Low collector to emitter saturation voltage VCE(sat) =

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RGF10AH THRU RGF10MH SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Amper

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JH240 2-WIRE RTD TRANSMITTER FEATURES • • • • • • • For 100 ohm Platinum RTDs – Linearized Three-Wire Lead Resistance Compensation Low-Drift Input Am

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PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: MJH16212 PH: (561)283-4500 FAX: (561)286-8914 Webs

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RJH60C9DPD Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in diode RENESAS Package code: PRSS

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RJH60D6DPK Silicon N Channel IGBT Application: Inverter Features • High breakdown-voltage • Low on-voltage • Built-in diode www.DataSheet4U.com Prel

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Preliminary Datasheet RJH60D7DPK 600V - 50A - IGBT Application: Inverter R07DS0165EJ0400 Rev.4.00 Apr 19, 2012 Features  Short circuit withstand t

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www.DataSheet4U.com SGC10DH THRU SGC10MH SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 600 Volts Forward Current - 1.0 A

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