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JILIN SINO-MICROELECTRONICS
D13009K - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13009K MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) PC(TO-3PB) 12A 400V 100W 120W.
JILIN SINO
D1555 - CASE-RATED BIPOLAR TRANSISTOR
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY R 3DD1555 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 5A 5 V(max) 1 s(max.
JILIN SINO-MICROELECTRONICS
D13007M - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13007M MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) 8A 400V 80W z z z z z .
Jilin Sino
HBR10150S - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR10150S IF(AV) VRRM Tj VF(max) MAIN CHARACTERISTICS 10（2×5）A 150 V 175 ℃ 0.72V （@Tj=125℃） APPLICATIONS .
JILIN SINO
D13005MD - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD13005MD IC VCEO PC(TO-220HF) PC(TO-220) MAIN CHARACTERISTICS 4A 400V 35W 75W Package .
JILIN SINO-MICROELECTRONICS
D13007MD - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD13007MD IC VCEO PC(TO-262/220C) MAIN CHARACTERISTICS 8A 400V 80W Package z z z z z .
Jilin Sino
HBR2045 - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR2045 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 45 V 175 ℃ 0.6V （@Tj=125℃） APPLICAT.
Jilin Sino
HBR20100 - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR20100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 100 V 175 ℃ 0.7V （@Tj=125℃） APPLIC.
Jilin Sino
HBR3200 - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR3200 MAIN CHARACTERISTICS IF(AV) VRRM Tj VF(max) 3A 200 V 175 ℃ 0.75V （@Tj=125℃） 、 APPLICATIONS Low vol.
Jilin Sino-microelectronics
3DD4202BD - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD4202BD IC VCEO PC(TO-92) PC(TO-251) PC(TO-126) MAIN CHARACTERISTICS 1.5A 400V 1W 10W 20.
JilinSino
JCS7N60 - N-CHANNEL MOSFET
R N N-CHANNEL MOSFET JCS7N60 MAIN CHARACTERISTICS Package ID VDSS Rdson （@Vgs=10V） Qg z z z UPS 7.0 A 600 V 1.2 Ω 54 nC APPLICATIONS z Hig.
JILIN SINO
T0435NF1 - TRIACS
R TRIACS T0435NF1 MAIN CHARACTERISTICS IT(RMS) VDRM IGT 4A 800V 35mA APPLICATIONS AC switching Phase control Package Pin 1 2 3 .
JILIN SINO
JCS640SH - N-CHANNEL MOSFET
N N- CHANNEL MOSFET R JCS640H MAIN CHARACTERISTICS ID 18A VDSS 200 V Rdson-max （@Vgs=10V） 0.15Ω Qg-typ 27.5nC Package UPS APP.
JILIN SINO
HBR3150 - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR3150 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 3A 150 V 175 ℃ 0.76V （@Tj=125℃） 、 APPLICATIONS.
JILIN SINO
2SC5200A - Silicon NPN Transistor
NPN Silicon NPN Triple Diffused Transistor R 2SC5200A APPLICATIONS Power Amplifier Applications ：VCEO=230V (min) 2SA1943A 100W （Ro.
JILIN SINO-MICROELECTRONICS
JCS18N50FH - N-CHANNEL MOSFET
N N- CHANNEL MOSFET R JCS18N50H MAIN CHARACTERISTICS ID VDSS Rdson（@Vgs=10V） Qg 18 A 500 V 0.27Ω 50nC z z z UPS APPLICATIONS z High efficie.
JILIN SINO
2SC5200B - Silicon NPN Transistor
NPN Silicon NPN Triple Diffused Transistor R 2SC5200B z z：VCEO=250V (min) z 2SA1943B z 100W z（RoHS） APPLICATIONS z Power Amplifier Application.
JILIN SINO-MICROELECTRONICS
JCS3205CH - N-CHANNEL MOSFET
N N-CHANNEL MOSFET R JCS3205H MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ UPS 110 A 55 V 8 mΩ 78nC APPLICATIONS H.
JILIN SINO-MICROELECTRONICS
JCS50N20WT - N-CHANNEL MOSFET
R JCS50N20T JCS50N20T MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ UPS 50A 200 V 50mΩ 90nC APPLICATIONS High fr.