.
JILIN SINO-MICROELECTRONICS
D13009K - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13009K MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) PC(TO-3PB) 12A 400V 100W 120W.
JILIN SINO-MICROELECTRONICS
D13007M - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13007M MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) 8A 400V 80W z z z z z .
JILIN SINO
D1555 - CASE-RATED BIPOLAR TRANSISTOR
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY R 3DD1555 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 5A 5 V(max) 1 s(max.
Jilin Sino
HBR10150S - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR10150S IF(AV) VRRM Tj VF(max) MAIN CHARACTERISTICS 10（2×5）A 150 V 175 ℃ 0.72V （@Tj=125℃） APPLICATIONS .
JILIN SINO
D13005MD - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD13005MD IC VCEO PC(TO-220HF) PC(TO-220) MAIN CHARACTERISTICS 4A 400V 35W 75W Package .
JILIN SINO-MICROELECTRONICS
D13007MD - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD13007MD IC VCEO PC(TO-262/220C) MAIN CHARACTERISTICS 8A 400V 80W Package z z z z z .
JILIN SINO
BT169D - Sensitive Gate SCRs
R Sensitive Gate SCRs BT169D MAIN CHARACTERISTICS Package IT(RMS) VDRM/VRRM IGT 0.8A 600V 200μA APPLICATIONS Half AC switching Phas.
JILIN SINO
T0435NF1 - TRIACS
R TRIACS T0435NF1 MAIN CHARACTERISTICS IT(RMS) VDRM IGT 4A 800V 35mA APPLICATIONS AC switching Phase control Package Pin 1 2 3 .
JILIN SINO
3DD13003F6 - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13003F6 MAIN CHARACTERISTICS IC 2.0A VCEO 400V PC(TO-126(S)) 20W Package z z z.
JILIN SINO-MICROELECTRONICS
3DD5017 - CASE-RATED BIPOLAR TRANSISTOR
R µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð;§Ìå CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017 FOR LOW FREQUENCY 3DD5017 Ö÷Òª²ÎÊý BVCBO IC VCE(sat) tf ÓÃ; z ²ÊÉ«µçÊÓ»ú¿.
JILIN SINO
BT136 - TRIACS
R TRIACS BT136 MAIN CHARACTERISTICS IT(RMS) VDRM IGT 4A 600V or 800V 10mA z z APPLICATIONS z AC switching z Phase control Package Pin 1 .
Jilin Sino
HBR3200 - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR3200 MAIN CHARACTERISTICS IF(AV) VRRM Tj VF(max) 3A 200 V 175 ℃ 0.75V （@Tj=125℃） 、 APPLICATIONS Low vol.
JILIN SINO-MICROELECTRONICS
JCS3205CH - N-CHANNEL MOSFET
N N-CHANNEL MOSFET R JCS3205H MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ UPS 110 A 55 V 8 mΩ 78nC APPLICATIONS H.
JILIN SINO
JCS640SH - N-CHANNEL MOSFET
N N- CHANNEL MOSFET R JCS640H MAIN CHARACTERISTICS ID 18A VDSS 200 V Rdson-max （@Vgs=10V） 0.15Ω Qg-typ 27.5nC Package UPS APP.
JILIN SINO
2SC5200A - Silicon NPN Transistor
NPN Silicon NPN Triple Diffused Transistor R 2SC5200A APPLICATIONS Power Amplifier Applications ：VCEO=230V (min) 2SA1943A 100W （Ro.
Jilin Sino
HBR5150 - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR5150 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 5A 150 V 175 ℃ 0.75V （@Tj=125℃） l 、 l APPLICATIONS l .
JILIN SINO-MICROELECTRONICS
JCS1404 - N-CHANNEL MOSFET
N R N-CHANNEL MOSFET JCS1404 MAIN CHARACTERISTICS Package ID 204 A VDSS 40 V Rdson（@Vgs=10V） 4 mΩ z z UPS APPLICATIONS z High efficiency.
JILIN SINO-MICROELECTRONICS
JCS50N20WT - N-CHANNEL MOSFET
R JCS50N20T JCS50N20T MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ UPS 50A 200 V 50mΩ 90nC APPLICATIONS High fr.
JILIN SINO-MICROELECTRONICS
JCS8N60FB - N-CHANNEL MOSFET
N R N-CHANNEL MOSFET JCS8N60CB/FB MAIN CHARACTERISTICS ID 7.5 A VDSS 600 V Rdson（@Vgs=10V） 1.2 Ω Qg 25 nC Package z z z UPS APPLICATIONS z .
