Jilin Sino Datasheet | Specifications & PDF Download

R SCHOTTKY BARRIER DIODE HBR2045 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 45 V 175 ℃ 0.6V （@Tj=125℃）   APPLICAT

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CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY R 3DD1555 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 5A 5 V(max) 1 s(max

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R SCHOTTKY BARRIER DIODE HBR10150S IF(AV) VRRM Tj VF(max) MAIN CHARACTERISTICS 10（2×5）A 150 V 175 ℃ 0.72V （@Tj=125℃）   APPLICATIONS 

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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13009K MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) PC(TO-3PB) 12A 400V 100W 120W

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NPN Silicon NPN Triple Diffused Transistor R 2SC5200B z z：VCEO=250V (min) z 2SA1943B z 100W z（RoHS） APPLICATIONS z Power Amplifier Application

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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13007M MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) 8A 400V 80W z z z z z

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NPN Silicon NPN Triple Diffused Transistor R 2SC5200A  APPLICATIONS  Power Amplifier Applications ：VCEO=230V (min)  2SA1943A  100W （Ro

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R Sensitive Gate SCRs BT169D MAIN CHARACTERISTICS Package IT(RMS) VDRM/VRRM IGT 0.8A 600V 200μA   APPLICATIONS  Half AC switching  Phas

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R SCHOTTKY BARRIER DIODE HBR3200 MAIN CHARACTERISTICS IF(AV) VRRM Tj VF(max) 3A 200 V 175 ℃ 0.75V （@Tj=125℃）  、  APPLICATIONS  Low vol

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N R N-CHANNEL MOSFET JCS7N60 MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson（@Vgs=10V） 1.2 Ω Qg 54 nC    LED APPLICATIO

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MT28N20A N N-CHANNEL MOSFET MAIN CHARACTERISTICS Package ID VDSS R(-d@sVogns=-1m0aVx） Qg-typ 28A 200V 85mΩ 52nC  DC/DC    APPLICAT

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R SCHOTTKY BARRIER DIODE HBR3150 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 3A 150 V 175 ℃ 0.76V （@Tj=125℃）  、  APPLICATIONS

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R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD13007MD IC VCEO PC(TO-262/220C) MAIN CHARACTERISTICS 8A 400V 80W Package z z z z z

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R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD13005MD IC VCEO PC(TO-220HF) PC(TO-220) MAIN CHARACTERISTICS 4A 400V 35W 75W Package

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R SCHOTTKY BARRIER DIODE HBR2200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 2A 200 V 175 ℃ 0.72V （@Tj=125℃）  、  APPLICATIONS

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MC08N005 N N-CHANNEL MOSFET MAIN CHARACTERISTICS Package ID VDSS R(-d@sVogns=-1t0yVp） Qg-typ 120A 80V 4.5mΩ 74.5nC  DC/DC  DC/DC

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JCS60N10I N N-CHANNEL MOSFET MAIN CHARACTERISTICS Package ID VDSS R(-d@sVogns=-1m0aVx） Qg-typ  DC/DC      Rdson    dv/dt 

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R SCHOTTKY BARRIER DIODE HBR2040 MAIN CHARACTERISTICS IF(AV) VRRM Tj VF(max) 20（2×10）A 40 V 175 ℃ 0.6V （@Tj=125℃） z z APPLICATIONS z High f

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N R N-CHANNEL MOSFET JCS740C MAIN CHARACTERISTICS Package ID 10 A VDSS 400 V Rdson（@Vgs=10V） 0.54 Ω Qg 19.7nC z z z UPS APPLICATI

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Intelligent Power Module SPE02M50T-A_C ：  500V,2A（）， 1.2A（）  MOSFET ：   Main Function Parameter： and  500V,2A(Peak),1.2A(Continuou

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