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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13009K MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) PC(TO-3PB) 12A 400V 100W 120W

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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13007M MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) 8A 400V 80W z z z z z

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CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY R 3DD1555 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 5A 5 V(max) 1 s(max

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R SCHOTTKY BARRIER DIODE HBR10150S IF(AV) VRRM Tj VF(max) MAIN CHARACTERISTICS 10（2×5）A 150 V 175 ℃ 0.72V （@Tj=125℃）   APPLICATIONS 

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R SCHOTTKY BARRIER DIODE HBR3200 MAIN CHARACTERISTICS IF(AV) VRRM Tj VF(max) 3A 200 V 175 ℃ 0.75V （@Tj=125℃）  、  APPLICATIONS  Low vol

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R SCHOTTKY BARRIER DIODE HBR2045 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 45 V 175 ℃ 0.6V （@Tj=125℃）   APPLICAT

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R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD13005MD IC VCEO PC(TO-220HF) PC(TO-220) MAIN CHARACTERISTICS 4A 400V 35W 75W Package

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R SCHOTTKY BARRIER DIODE HBR3150 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 3A 150 V 175 ℃ 0.76V （@Tj=125℃）  、  APPLICATIONS

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N N- CHANNEL MOSFET R JCS18N50H MAIN CHARACTERISTICS ID VDSS Rdson（@Vgs=10V） Qg 18 A 500 V 0.27Ω 50nC z z z UPS APPLICATIONS z High efficie

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R SCHOTTKY BARRIER DIODE HBR20100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 100 V 175 ℃ 0.7V （@Tj=125℃）   APPLIC

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R JCS50N20T JCS50N20T MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ    UPS 50A 200 V 50mΩ 90nC APPLICATIONS  High fr

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R SCHOTTKY BARRIER DIODE HBR5150 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 5A 150 V 175 ℃ 0.75V （@Tj=125℃） l 、 l APPLICATIONS l

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JCS60N10I N N-CHANNEL MOSFET MAIN CHARACTERISTICS Package ID VDSS R(-d@sVogns=-1m0aVx） Qg-typ  DC/DC      Rdson    dv/dt 

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R NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD13007MD IC VCEO PC(TO-262/220C) MAIN CHARACTERISTICS 8A 400V 80W Package z z z z z

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R TRIACS T0435NF1 MAIN CHARACTERISTICS IT(RMS) VDRM IGT 4A 800V 35mA   APPLICATIONS AC switching Phase control Package Pin 1 2 3

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NPN Silicon NPN Triple Diffused Transistor R 2SC5200A  APPLICATIONS  Power Amplifier Applications ：VCEO=230V (min)  2SA1943A  100W （Ro

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R SCHOTTKY BARRIER DIODE HBR2200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 2A 200 V 175 ℃ 0.72V （@Tj=125℃）  、  APPLICATIONS

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N R N-CHANNEL MOSFET JCS740C MAIN CHARACTERISTICS Package ID 10 A VDSS 400 V Rdson（@Vgs=10V） 0.54 Ω Qg 19.7nC z z z UPS APPLICATI

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CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5023 FOR LOW FREQUENCY R 3DD5023 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 6A 5 V(max) 1 s(max

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N R N-CHANNEL MOSFET JCS740C MAIN CHARACTERISTICS Package ID 10 A VDSS 400 V Rdson（@Vgs=10V） 0.54 Ω Qg 19.7nC z z z UPS APPLICATI

(41 views)