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S9014W - NPN Transistor
S901 4W TRANSISTOR(NPN) FEATURES Complementary to S9015W Small Surface Mount Package SOT–323 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) .AO3400 - 30V N-Channel MOSFET
30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@5.8A < 28mΩ RDS(ON), Vgs@4.5V, Ids@5.0A < 33mΩ RDS(ON), Vgs@2.5V, Ids@4.0A < 52mΩ.SI2301 - P-Channel MOSFET
20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A RDS(ON), Vgs@-2.5V, Ids@-2.0A 130mΩ 190mΩ Features Advanced trench pr.XC6206 - 100mA Low Dropout CMOS Voltage Regulators
XC6206 Series 100mA Low Dropout CMOS Voltage Regulators ■ DESCRIPTION The XC6206 series are precise, low power consumption, high voltage; positive vo.S8550 - PNP Transistor
TRANSISTOR(PNP) FEATURES z Complimentary to S8050 z Collector current: IC=0.5A MARKING : 2TY SOT-23 SS8 95051 02 1. BASE 2. EMITTER 3. COLLECTOR M.2SB1188 - TRANSISTOR
2SB1 1 8 8 TRANSISTOR(PNP) SOT-89 FEATURES z z 1. BASE 1 2. COLLECTOR 2 3. EMITTER 3 Low VCE(sat). Complements the 2SD1766 MAXIMUM RATINGS (TA=25℃.C2062 - NPN Transistor
GuangDong Yuejing High Technology CO.,LTD. ■■APPLICATION:High-Gain Amplifier. C2062 —NPN silicon — ■■MAXIMUM RATING(Ta=25℃) PARAMETER SYMBOL RATIN.SI2302 - 20V N-Channel MOSFET
SI2302 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.6A RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 85m Ω 115mΩ Features Advanced tre.SS8550 - PNP Transistor
SS8 550 TRANSISTOR(PNP) FEATURES High Collector Current Complementary to SS8050 SOT–23 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol.AO3401 - 30V P-Channel MOSFET
30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-4.2A < 64m Ω RDS(ON), Vgs@-4.5V, Ids@-4.0A < 75m Ω RDS(ON), Vgs@-2.5V, Ids@-1..M28S - NPN Transistor
M28 S TRANSISTOR(NPN) SOT–23 FEATURES Excellent hFE Linearity High DC Current Gain MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Pa.BAT54CT - SWITCHING DIODE
SWITCHING DIODE FEATURES z Low Forward Voltage Drop z Fast Switching BAT54T/AT/CT/ST SOT-523 Maximum Ratings @TA=25℃ Parameter Non-Repetitive Peak r.MMBT3904T - NPN Transistor
MMBT3904T TRANSISTOR(NPN) FEATURES Complementary to MMBT3906T Small Package SOT–523 MARKING:1N MAXIMUM RATINGS (Ta=25℃ unless otherwise noted.2SA1201 - TRANSISTOR
2SA1 201 TRANSISTOR(PNP) FEATURES z High voltage z High transition frequency z Complementary to 2SC2881 MAXIMUM RATINGS (TA=25℃ unless otherwise note.SI2312 - 20V N-Channel MOSFET
20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A < 31mΩ RDS(ON), Vgs@2.5V, Ids@4.5A < 37mΩ RDS(ON), Vgs@1.8V, Ids@3.9A < 85m.1SS344 - SCHOTTKY B ARRIER DIODE
1SS344 SCHOTTKY BARRIER DIODE FEATURES Low Forward Voltage Fast Reverse Recovery Time High Forward Current APPLICATIONS High Speed Switching .2SB1260 - PNP Transistor
2SB1 260 TRANSISTOR(PNP) SOT-89-3L FEATURES z Power Transistor z High Voltage and Current z Low Collector-emitter saturation voltage z Complements .2SC2412 - TRANSISTOR
2SC2412 TRANSISTOR (NPN) FEATURES · Low Cob ,Cob = 2.0 pF (Typ). MARKING : BQ, BR, BS MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO.AMS1117 - 1A Adjustable/Fixed Low Dropout Linear Regulator
1A Adjustable/Fixed Low Dropout Linear Regulator AMS1117 General Description The AMS1117 is a low dropout three-terminal regulator with a dropout of.DH-1 - Air Pressure Pump
DH-1 Air Pressure Pump Applications Blood Pressure M/C, Health Care, Bidet Massager, Medical Equipment, etc Specifications 1. Rated Voltage 2. Rated .