.
JINAN JINGHENG
2N60 - 600V N-Channel Power MOSFET
R SEMICONDUCTOR 2N60 600V N-Channel Power MOSFET FEATURES ● RDS(ON)<4.4Ω @ VGS=10V,ID=1A ● Fast switching capability ● Lead free in compliance with .
JINAN JINGHENG
7N65 - 650V N Channel Power MOSFET
R SEMICONDUCTOR 7N65 7N65F 7N65D 7N65E 7N65M 7N65N 650V N-Channel Power MOSFET FEATURES ● RDS(ON)<1.5Ω @ VGS=10V ● Fast switching capability ● Low g.
JINAN JINGHENG
MUR2020 - GLASS PASSIVATED SUPER FAST RECTIFIER
R SEMICONDUCTOR MUR2020 THRU MUR2060 GLASS PASSIVATED SUPER FAST RECTIFIER Reverse Voltage - 200 -600 Volts Forward Current - 20.0Amperes FEATURES .
JINAN JINGHENG
1N5347 - 5W SILICON PLANAR ZENER DIODES
R SEMICONDUCTOR 1N5342 THRU 1N5388 5W SILICON PLANAR ZENER DIODES FEATURES Low leakage, low zener impedance at low current Maximum power dissipation.
JINAN JINGHENG
4N65 - 650V N Channel Power MOSFET
R SEMICONDUCTOR 4N65 650V N-Channel Power MOSFET FEATURES ● RDS(ON)<2.4Ω @ VGS=10V ● Fast switching capability ● Lead free in compliance with EU RoH.
JINAN JINGHENG
SR1040 - SCHOTTKY BARRIER RECTIFIER
R SEMICONDUCTOR SR1020 THRU SR10200(SINGLE CHIP) SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 200 Volts Forward Current - 10.0Amperes FEATURES.
JINAN JINGHENG
1N5349 - 5W SILICON PLANAR ZENER DIODES
R SEMICONDUCTOR 1N5342 THRU 1N5388 5W SILICON PLANAR ZENER DIODES FEATURES Low leakage, low zener impedance at low current Maximum power dissipation.
JINAN JINGHENG
MB10F - SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
R SEMICONDUCTOR FEATURES MB1F THRU MB10F SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Reverse Voltage: 100 to 1000 Volts Forward Current: 0.8 Amps.
JINAN JINGHENG
MURF2040CT - GLASS PASSIVATED SUPER FAST RECTIFIER
R SEMICONDUCTOR MURF2020CT THRU MURF2060CT GLASS PASSIVATED SUPER FAST RECTIFIER Reverse Voltage - 200 -600 Volts Forward Current - 20.0Amperes FEAT.
JINAN JINGHENG
SR20100CT - SCHOTTKY BARRIER RECTIFIER
R SEMICONDUCTOR SR2020CT THRU SR20200CT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 200 Volts Forward Current - 20Amperes FEATURES Plastic p.
JINAN JINGHENG
SS510B - SCHOTTKY BARRIER RECTIFIER
R SEMICONDUCTOR SS52B THRU SS520B SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 200 Volts Forward Current - 5.0Amperes FEATURES SMB(DO-214AA) .
JINAN JINGHENG
7N65N - 650V N Channel Power MOSFET
R SEMICONDUCTOR 7N65 7N65F 7N65D 7N65E 7N65M 7N65N 650V N-Channel Power MOSFET FEATURES ● RDS(ON)<1.5Ω @ VGS=10V ● Fast switching capability ● Low g.
JINAN JINGHENG ELECTRONICS
MUR620CT - GLASS PASSIVATED SUPER FAST RECTIFIER
R SEMICONDUCTOR MUR620CT THRU MUR660CT GLASS PASSIVATED SUPER FAST RECTIFIER Reverse Voltage - 200 - 600V Volts Forward Current - 6.0Amperes FEATURE.
JINAN JINGHENG
SR3150 - SCHOTTKY BARRIER RECTIFIER
R SEMICONDUCTOR FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction ,majority carrier conduc.
JINAN JINGHENG
MUR2060 - GLASS PASSIVATED SUPER FAST RECTIFIER
R SEMICONDUCTOR MUR2020 THRU MUR2060 GLASS PASSIVATED SUPER FAST RECTIFIER Reverse Voltage - 200 -600 Volts Forward Current - 20.0Amperes FEATURES .
JINAN JINGHENG
SS510C - SCHOTTKY BARRIER RECTIFIER
R SEMICONDUCTOR SS52C THRU SS520C SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 200 Volts Forward Current - 5.0Amperes FEATURES SMC(DO-214AB) .
JINAN JINGHENG
BAT42 - SMALL SIGNAL SCHOTTKY DIODES
R SEMICONDUCTOR BAT42,BAT43 SMALL SIGNAL SCHOTTKY DIODES FEATURES For general purpose applications These diodes features very low turn-on voltage an.
JINAN JINGHENG
1N5368 - 5W SILICON PLANAR ZENER DIODES
R SEMICONDUCTOR 1N5342 THRU 1N5388 5W SILICON PLANAR ZENER DIODES FEATURES Low leakage, low zener impedance at low current Maximum power dissipation.
JINAN JINGHENG
SR3100 - SCHOTTKY BARRIER RECTIFIER
R SEMICONDUCTOR FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction ,majority carrier conduc.
JINAN JINGHENG
1N5373 - 5W SILICON PLANAR ZENER DIODES
R SEMICONDUCTOR 1N5342 THRU 1N5388 5W SILICON PLANAR ZENER DIODES FEATURES Low leakage, low zener impedance at low current Maximum power dissipation.
