Jinan Jingheng Datasheet | Specifications & PDF Download

R SEMICONDUCTOR 2N60 600V N-Channel Power MOSFET FEATURES ● RDS(ON)<4.4Ω @ VGS=10V,ID=1A ● Fast switching capability ● Lead free in compliance with

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R SEMICONDUCTOR 4N65 650V N-Channel Power MOSFET FEATURES ● RDS(ON)<2.4Ω @ VGS=10V ● Fast switching capability ● Lead free in compliance with EU RoH

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R SEMICONDUCTOR 7N65 7N65F 7N65D 7N65E 7N65M 7N65N 650V N-Channel Power MOSFET FEATURES ● RDS(ON)<1.5Ω @ VGS=10V ● Fast switching capability ● Low g

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D92-02 ( Tj=25℃） （） f=60Hz L=1mH t=8.3ms Tstg Tj VRRM IFSM IF(AV)（） IF(AV)（） IO（） EAS（） -40to+150 150 200 150 10 20 10 20 ℃ ℃ V

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R SEMICONDUCTOR 1N5220 THRU 1N5281 0.5W SILICON PLANAR ZENER DIODES FEATURES DO-35 Standard zener voltage tolerance is ±20%.Add suffix A for ±10

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R SEMICONDUCTOR 1N5342 THRU 1N5388 5W SILICON PLANAR ZENER DIODES FEATURES Low leakage, low zener impedance at low current Maximum power dissipation

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R SEMICONDUCTOR 7N65 7N65F 7N65D 7N65E 7N65M 7N65N 650V N-Channel Power MOSFET FEATURES ● RDS(ON)<1.5Ω @ VGS=10V ● Fast switching capability ● Low g

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R SEMICONDUCTOR MUR2020 THRU MUR2060 GLASS PASSIVATED SUPER FAST RECTIFIER Reverse Voltage - 200 -600 Volts Forward Current - 20.0Amperes FEATURES

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R SEMICONDUCTOR 2EZ6.8D5 THRU 2EZ200D5 2W SILICON PLANAR ZENER DIODES FEATURES Low leakage, low zener impedance at low current Maximum power dissipa

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R SR620 THRU SR6200(SINGLE CHIP) SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to200 Volts Forward Current - 6.0Amperes S E M I C O N D U C T O R

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R SEMICONDUCTOR SRF3045CT THRU SRF30200CT SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 45 to 200 Volts Forward Current - 30Amperes FEATURES Plastic

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R SEMICONDUCTOR BZX55-B2V0 THRU BZX55-B200 0.5W SILICON PLANAR ZENER DIODES FEATURES DO-35 The zener voltage are graded according to the internati

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R SEMICONDUCTOR ZMM5221 THRU ZMM5262 0.5W SILICON PLANAR ZENER DIODES FEATURES Standard Zener voltage tolerance is 20%.Add suffix A for 10% toler

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R SEMICONDUCTOR MM3Z2V0 THRU MM3Z120 0.3W SILICON PLANAR ZENER DIODES FEATURES Total power dissipation:max.300 mW Small plastic package suitable fo

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R SEMICONDUCTOR 1N5342 THRU 1N5388 5W SILICON PLANAR ZENER DIODES FEATURES Low leakage, low zener impedance at low current Maximum power dissipation

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R SEMICONDUCTOR 1N5342 THRU 1N5388 5W SILICON PLANAR ZENER DIODES FEATURES Low leakage, low zener impedance at low current Maximum power dissipation

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R SEMICONDUCTOR 7N65 7N65F 7N65D 7N65E 7N65M 7N65N 650V N-Channel Power MOSFET FEATURES ● RDS(ON)<1.5Ω @ VGS=10V ● Fast switching capability ● Low g

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R SEMICONDUCTOR 1N5921 THRU 1N5956 1.5W SILICON PLANAR ZENER DIODES FEATURES Low leakage, low zener impedance at low current Maximum power dissipati

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R SEMICONDUCTOR FEATURES ● Glass passivated chip junction ● High case dielectric strength ● High surge current capability ● ldeal for printed circuit

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R SEMICONDUCTOR 1N5342 THRU 1N5388 5W SILICON PLANAR ZENER DIODES FEATURES Low leakage, low zener impedance at low current Maximum power dissipation

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