K102 Datasheet | Specifications & PDF Download

ZINC OXIDE VARISTOR Ancol FEATURES: l Widely voltage range 1 8v-1 .8kv l Fast response to the rapidly increase Voltage (Mu sec.) l Excellent non-lin

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ZINC OXIDE VARISTOR Ancol FEATURES: l Widely voltage range 1 8v-1 .8kv l Fast response to the rapidly increase Voltage (Mu sec.) l Excellent non-lin

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ZINC OXIDE VARISTOR Ancol FEATURES: l Widely voltage range 1 8v-1 .8kv l Fast response to the rapidly increase Voltage (Mu sec.) l Excellent non-lin

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ALUMINUM ELECTROLYTIC CAPACITORS GU Snap-in Terminal Type, 105°C Standard series Withstanding 3000 hours application of rated ripple current at 105°C

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Surface Mount Aluminum Electrolytic Capacitors FEATURES • • • • EXTENDED TEMPERATURE +125OC & LONG LIFE (T0 5,000 HOURS) AVAILABLE WITH ANTI-VIBRATION

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Surface Mount Aluminum Electrolytic Capacitors FEATURES • • • • EXTENDED TEMPERATURE +125OC & LONG LIFE (T0 5,000 HOURS) AVAILABLE WITH ANTI-VIBRATION

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Surface Mount Aluminum Electrolytic Capacitors FEATURES • • • • EXTENDED TEMPERATURE +125OC & LONG LIFE (T0 5,000 HOURS) AVAILABLE WITH ANTI-VIBRATION

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·100% avalanche tested ·Minimum Lo

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www.DataSheet4U.com PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTK 102N30P VDSS = 300 V ID25 = 102 A RDS(on) ≤ 33 mΩ Symbo

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ALUMINUM ELECTROLYTIC CAPACITORS KG Lug / Snap-in Terminal Type, For Audio Equipment series Disigned for high grade audio equipment, giving priority

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ALUMINUM ELECTROLYTIC CAPACITORS KG Lug / Snap-in Terminal Type, For Audio Equipment series Disigned for high grade audio equipment, giving priority

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ALUMINUM ELECTROLYTIC CAPACITORS PJ Low Impedance, For Switching Power Supplies series Low impedance and high reliability withstanding 5000 hours loa

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www.DataSheet4U.com HOW TO ORDER Zinc Oxide Leaded Varistors FNR __ 05 K | || Non Linear Resistor Type & Diameter Tolerance Designation Design

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9. % 6×4 LCD DRIVER Features • Operating voltage 2.4-5.2V • Built-in 256kHz RC oscillator（default） • Selection of 1/2 or 1/3 bias • Selection of

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Preliminary Technical Information X2-Class Power MOSFET IXTK102N65X2 IXTX102N65X2 VDSS = ID25 = RDS(on)  650V 102A 30m N-Channel Enhancement Mo

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Fast Switching Speed ·Minimum Lo

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www.DataSheet4U.com SSM3K102TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K102TU High Speed Switching Applications • • 1.8V driv

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RJK1021DPE N-Channel Power MOSFET High-Speed Switching Use REJ03G1630-0100 Rev.1.00 Apr 03, 2008 Features • VDSS : 100 V • RDS(on) : 20 mΩ (Max) • ID

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