K1060 Datasheet | Specifications & PDF Download

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Semiconductor SMK1060P Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=600V(Min.) • Low Crss : Crss=18pF(

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FMSK1020C-D2G THRU FMSK10200C-D2G Schottky Barrier Rectifier (Single Chip) Reverse Voltage: 20 to 200 Volts Forward Current: 10.0 Ampere Features • P

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Schottky Barrier Rectifier FMSK1020C-DG THRU FMSK10200C-DG Reverse Voltage: 20 to 200 Volts Forward Current: 1.0 Ampere Features • Plastic package h

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SMK1060FG Advanced N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance: RDS(on)=0.6Ω (Typ.)  Low gate char

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SR1020 thru SR1060 SK1020 thru SK1060 MINIATURE SCHOTTKY BARRIER RECTIFIER CHENG- YI ELECTRONIC VOLTAGE RANGE 20 TO 60 Volts CURRENT 10.0 Amperes TO

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SMK1060FJ Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features  High Voltage : BVDSS=600V(Min.)  Low Crss : Crss=18pF(Typ.)  Low

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Elektronische Bauelemente SK1060BM 60V, 10A Low VF Surface Mount Schottky Barrier Rectifiers RoHS Compliant Product A suffix of “-C” specifies halog

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SMK1060F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features     High Voltage : BVDSS=600V(Min.) Low Crss : Crss=18pF(Typ.) Low

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MURF1060(BR2CK1060F) Rev.C Feb.-2015 / Descriptions TO-220F  。 Ultrafast Recovery Diode in a TO-220F Plastic Package. DATA SHEET / Features ， TO

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SMK1060-VB SMK1060-VB Datasheet N-Channel 650V (D-S) Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (n

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SMK1060D2 Advanced N-Ch Power MOSFET SWITCHING REGURATOR APPLICATIONS Features • • • • High Voltage : BVDSS=600V(Min.) Low Crss : Crss=18pF(Typ.) Low

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SK1020D2 SK10100D2 SK1020D2 SK10100D2 SMD Schottky Barrier Rectifier Diodes SMD Schottky-Gleichrichterdioden IFAV VF1 Tjmax = 10 A < 0.50 V

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SK1020D1 SK10100D1 SK1020D1 SK10100D1 Surface Mount Schottky Rectifiers – Single Diode Schottky-Gleichrichter für die Oberflächenmontage – E

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