This Material Copyrighted By Its Respective Manufa.
Hitachi Semiconductor
K133 - 2SK133
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its R.
Renesas
K1338 - Silicon N-Channel MOSFET
2SK1338 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No .
Hitachi Semiconductor
2SK133 - Silicon N-Channel MOSFET
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its R.
Hitachi Semiconductor
2SK1335 - Silicon N-Channel MOSFET
2SK1335(L), 2SK1335(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Lo.
Hitachi Semiconductor
2SK1336 - Silicon N-Channel MOSFET
2SK1336 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4.
Hitachi Semiconductor
2SK1338 - Silicon N-Channel MOSFET
2SK1338 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No.
Inchange Semiconductor
2SK1339 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lo.
Inchange Semiconductor
2SK1331 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=15A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Minimum Lot-to-Lot variations for.
Inchange Semiconductor
2SK1330A - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Minimum Lot-to-Lot variations for .
Inchange Semiconductor
2SK1330 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Minimum Lot-to-Lot variations for .
Hitachi Semiconductor
K1336 - Silicon N-Channel MOS FET
2SK1336 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V.
Sanyo Semicon Device
2SK1332 - Silicon N-Channel MOSFET
Ordering number:EN3137 N-Channel Junction Silicon FET www.DataSheet4U.com 2SK1332 Low-Frequency General-Purpose Amplifier Applications Applications.
Hitachi Semiconductor
2SK1334 - Silicon N-Channel MOSFET
2SK1334 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current.
Hitachi Semiconductor
2SK1335L - Silicon N-Channel MOSFET
2SK1335(L), 2SK1335(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Lo.
Hitachi Semiconductor
2SK1335S - Silicon N-Channel MOSFET
2SK1335(L), 2SK1335(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Lo.
Hitachi Semiconductor
2SK1337 - Silicon N-Channel MOSFET
2SK1337 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4.
Hitachi Semiconductor
2SK1339 - Silicon N-Channel MOSFET
2SK1339 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current.
Hitachi Semiconductor
K1338 - 2SK1338
2SK1338 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No.
Sanyo Semiconductor Corporation
K1332 - N-Channel Junction Silicon FET
Ordering number:EN3137 N-Channel Junction Silicon FET www.DataSheet4U.com 2SK1332 Low-Frequency General-Purpose Amplifier Applications Applications.
INCHANGE
2SK1338 - N-Channel MOSFET
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot.
