K156 Datasheet | Specifications & PDF Download

Technical Data Data Sheet N2596, REV.- SK156 SCHOTTKY RECTIFIER SK156 SMC Features  Small foot print,surface mountable  Very low forward Voltage

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=300V(Min) ·Minimum Lot-to-Lot variations for

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isc N-Channel MOSFET Transistor 2SK1563 DESCRIPTION ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=500 (Min) ·Minimum Lot-to-Lot varia

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Electroytic Capacitors Motor - Starting Capacitors Type MDK Features double-potted design protection according to IP 54 high current loading connect

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=450 (Min) ·Minimum Lot-to-Lot variations for

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2SK1566, 2SK1567 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=900 (Min) ·Minimum Lot-to-Lot variations for

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2SK1567-VB 2SK1567-VB Datasheet N-Channel 650V (D-S) Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (n

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www.DataSheet4U.com Free Datasheet http://www.datasheet4u.net/

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ISL9K1560G3 November 2002 ISL9K1560G3 15A, 600V Stealth™ Dual Diode General Description The ISL9K1560G3 is a Stealth™ dual diode optimized for low l

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=800 (Min) ·Minimum Lot-to-Lot variations for

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2SK1566, 2SK1567 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features • • • • • Low on-resistance High spe

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K1567-VB K1567-VB Datasheet N-Channel 650V (D-S) Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC)

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2SK1566, 2SK1567 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low driv

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Preliminary Datasheet RJK1560DPP-M0 Silicon N Channel MOS FET High Speed Power Switching Features  Capable of 2.5 V gate drive  Low on-resistance R

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor

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NOT RECOMMENDED FOR NEW DESIGNS MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth 

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