K161 Datasheet | Specifications & PDF Download

2SK1618(L), 2SK1618(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Lo

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2SK1618(L), 2SK1618(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Lo

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isc N-Channel MOSFET Transistor 2SK1610 DESCRIPTION ·Drain Current –ID=13A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Minimum Lot-to-Lot varia

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Power F-MOS FETs 2SK1611 Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q VGSS: 30V guaranteed q Low RDS(on), high-spe

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isc N-Channel MOSFET Transistor 2SK1613 DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Minimum Lot-to-Lot variat

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Minimum Lot-to-Lot variations for

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Minimum Lot-to-Lot variations for

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isc N-Channel MOSFET Transistor 2SK1614 DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Minimum Lot-to-Lot variat

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R1163x SERIES 3-MODE 150mA LDO REGULATOR with the Reverse Current Protection NO.EA-118-0605 OUTLINE The R1163x Series consist of CMOS-based voltage re

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Features ● 2.5x0.7x1.0mm right angle SMD LED ● Ideal for indication on hand held products ● Low current operation ● Standard Package: 3,000pcs/ Reel ●

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Thru-beam sensor Dimensions GA18/GK18/25/115/161 2.2 43 55.6 ø 11.2 M18 x 1 15 S 7.8 Model Number GA18/GK18/25/115/161 Thru-beam sensor with 2

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Power F-MOS FETs 2SK1611 Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q VGSS: 30V guaranteed q Low RDS(on), high-spe

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www.DataSheet4U.com K1613 Series 3.3V Voltage Controlled Temperature Compensated Crystal Oscillators Œ Applications: Phase Locked Loops Clocking “Syn

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K7K1636T2C K7K1618T2C 512Kx36 & 1Mx18 DDRII+ CIO b2 SRAM 18Mb DDRII+ SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant) INFORMATION IN

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RP506x Series 2 A PWM/VFM Step-down DC/DC Converter with Synchronous Rectifier NO.EA-296-130925 OUTLINE The RP506x are low supply current CMOS-based P

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Surface Mount Aluminum Electrolytic Capacitors FEATURES • • • • EXTENDED TEMPERATURE +125OC & LONG LIFE (T0 5,000 HOURS) AVAILABLE WITH ANTI-VIBRATION

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R1163x SERIES 3-MODE 150mA LDO REGULATOR with the Reverse Current Protection NO.EA-118-0605 OUTLINE The R1163x Series consist of CMOS-based voltage re

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R1163x SERIES 3-MODE 150mA LDO REGULATOR with the Reverse Current Protection NO.EA-118-0605 OUTLINE The R1163x Series consist of CMOS-based voltage re

(10 views)