K161 Datasheet | Specifications & PDF Download

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isc N-Channel MOSFET Transistor 2SK1614 DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Minimum Lot-to-Lot variat

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2SK1618(L), 2SK1618(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Lo

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Minimum Lot-to-Lot variations for

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isc N-Channel MOSFET Transistor 2SK1610 DESCRIPTION ·Drain Current –ID=13A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Minimum Lot-to-Lot varia

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∗RP103Qxx2 (SC-88A) is the discontinued product. As of April in 2016 RP103x SERIES LOW NOISE 150mA LDO REGULATOR NO.EA-149-160426 OUTLINE The RP103

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RP109x SERIES LOW NOISE 150mA LDO REGULATOR NO.EA-204-170425 OUTLINE The RP109x Series are CMOS-based voltage regulator ICs with high output voltag

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2SK1618(L), 2SK1618(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Lo

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∗RP103Qxx2 (SC-88A) is the discontinued product. As of April in 2016 RP103x SERIES LOW NOISE 150mA LDO REGULATOR NO.EA-149-160426 OUTLINE The RP103

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Minimum Lot-to-Lot variations for

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Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http:/

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Power F-MOS FETs 2SK1611 Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q VGSS: 30V guaranteed q Low RDS(on), high-spe

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K7K1636U2C K7K1618U2C 512Kx36 & 1Mx18 DDRII+ CIO b2 SRAM 18Mb DDRII+ SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant) INFORMATION IN

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Features ● 2.5x0.7x1.0mm right angle SMD LED ● Ideal for indication on hand held products ● Low current operation ● Standard Package: 3,000pcs/ Reel ●

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www.DataSheet4U.com K1610T Series 5V Temperature Compensated Crystal Oscillators Œ Applications: Clocking “Sync” to NTSC Video Standards; Reference S

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K7K1636T2C K7K1618T2C 512Kx36 & 1Mx18 DDRII+ CIO b2 SRAM 18Mb DDRII+ SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant) INFORMATION IN

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Power F-MOS FETs 2SK1611 Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q VGSS: 30V guaranteed q Low RDS(on), high-spe

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isc N-Channel MOSFET Transistor 2SK1613 DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Minimum Lot-to-Lot variat

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