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SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION.
FEATURES ᴌLow Noise Figure.
: NF=2.5dB(Typ.) (f=100MHz). ᴌHigh Forward Transfer Admittance.
:|yfs|= 9mS(Typ.). ᴌExtremely Low Reverse Transfer Capacitance.
: Crss=0.1pF(Typ.)
MAXIMUM RATINGS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Gate-Drain Voltage Gate-Current Drain Power Dissipation Junction Temperature
VGDO IG PD Tj
Storage Temperature Range
Tstg
RATING -18 10 400 150
-55ᴕ150
UNIT V mA
mW ᴱ ᴱ
J K
D
KTK161
N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR
B
A
H
M
G
C
EE
1 2 3N L
1. DRAIN 2. SOURCE 3. GATE
F
O DIM MILLIMETERS
A
3.20 MAX
B
4.30 MAX
C
0.55 MAX
D
2.40+_ 0.15
E
1.27
F
2.30
G
14.00+_ 0.50
H
0.60 MAX
J
1.05
K
1.45
L
25
M
0.80
N
0.55 MAX
O
0.
KTK161 Datasheet
