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SEMICONDUCTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS
FEATURES 2.5 Gate Drive. Low Threshold Voltage : Vth=0.5 High Speed. Small Package. Enhancement-Mode.
1.5V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage Gate-Source Voltage DC Drain Current Drain Power Dissipation Channel Temperature
VDS VGSS
ID PD Tch
Storage Temperature Range
Tstg
RATING 30 20 50 100 150
-55 150
UNIT V V mA mW
EQUIVALENT CIRCUIT
D
G
A
C
G
H
KTK5131E
N CHANNEL MOS FIELD EFFECT TRANSISTOR
E
B
DIM MILLIMETERS
A
1.60+_ 0.10
2
D
B
0.85+_ 0.10
1
3
C
0.70+_ 0.10
D 0.27+0.10/-0.05
E
1.60+_ 0.10
G
1.00+_ 0.10
H
0.50
J
0.13+_ 0.05
J
1. SOURCE 2. GATE 3.