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SEMICONDUCTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS
FEATURES ᴌ2.5 Gate Drive. ᴌLow Threshold Voltage : Vth=0.5ᴕ1.5V. ᴌHigh Speed. ᴌSmall Package. ᴌEnhancement-Mode.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Drain-Source Voltage Gate-Source Voltage DC Drain Current Drain Power Dissipation Channel Temperature
VDS VGSS
ID PD Tch
Storage Temperature Range
Tstg
EQUIVALENT CIRCUIT
D
RATING 30 ᴦ20 50 200 150
-55ᴕ150
UNIT V V mA mW ᴱ ᴱ
G
A G H
D
KTK5131S
N CHANNEL MOS FIELD EFFECT TRANSISTOR
E
L
B
L
2
3
1
P
P
M
1. SOURCE 2. GATE 3. DRAIN
DIM A B C D E G H J K L
M N P
MILLIMETERS 2.93+_ 0.20
1.30+0.20/-0.15 1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20 1.90 0.95
0.13+0.10/-0.05
0.00 ~ 0.10 0.55
0.20 MIN 1.00+0.20/-0.
KTK5131S Datasheet
