KTK5132E
KTK5132E is N-CHANNEL MOS FIELD EFFECT TRANSISTOR manufactured by KEC.
FEATURES
2.5 Gate Drive. Low Threshold Voltage : Vth=0.5 High Speed. Small Package. Enhancement-Mode.
1.5V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage Gate-Source Voltage
VDS VGSS
DC Drain Current
Drain Power Dissipation
Channel Temperature
Tch
Storage Temperature Range
Tstg
RATING 30 20 100 100 150
-55 150
UNIT V V m A m W
EQUIVALENT CIRCUIT
N CHANNEL MOS FIELD EFFECT TRANSISTOR
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Gate Leakage Current
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Time
Turn-on Time Turn-off Time
IGSS V(BR)DSS
IDSS Vth |Yfs| RDS(ON) Ciss Crss Coss ton toff
TEST CONDITION VGS= 16V, VDS=0V ID=100 A, VGS=0V VDS=30V, VGS=0V VDS=3V, ID=0.1m A VDS=3V, ID=10m A ID=10m A, VGS=2.5V VDS=3V, VGS=0V, f=1MHz VDS=3V, VGS=0V, f=1MHz VDS=3V, VGS=0V, f=1MHz
VDD=5V, ID=10m A, VGS=0 5V
2014. 3....
