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SEMICONDUCTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS
FEATURES 2.5 Gate Drive. Low Threshold Voltage : Vth=0.5 High Speed. Small Package. Enhancement-Mode.
1.5V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Drain-Source Voltage Gate-Source Voltage
VDS VGSS
30 20
DC Drain Current
ID 100
Drain Power Dissipation
PD * 200
Channel Temperature
Tch 150
Storage Temperature Range
Tstg -55 150
Note) * Package Mounted On 99.5% Alumina 10 8 0.6 )
UNIT V V mA mW
EQUIVALENT CIRCUIT
D
G
KTK5132U
N CHANNEL MOS FIELD EFFECT TRANSISTOR
A J G
E
MBM
DIM MILLIMETERS
DA
2.00+_ 0.20
2 B 1.25+_ 0.15
13
C 0.90+_ 0.10 D 0.3+0.10/-0.05
E 2.10 +_ 0.20
G 0.65 P H 0.15+0.1/-0.06
J 1.30
K 0.00~0.10
C L
L HM
0.70 0.42 +_0.