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KTK5132U - N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Key Features

  • 2.5 Gate Drive. Low Threshold Voltage : Vth=0.5 High Speed. Small Package. Enhancement-Mode. 1.5V.

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Datasheet Details

Part number KTK5132U
Manufacturer KEC
File Size 759.19 KB
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KTK5132U Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES 2.5 Gate Drive. Low Threshold Voltage : Vth=0.5 High Speed. Small Package. Enhancement-Mode. 1.5V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDS VGSS 30 20 DC Drain Current ID 100 Drain Power Dissipation PD * 200 Channel Temperature Tch 150 Storage Temperature Range Tstg -55 150 Note) * Package Mounted On 99.5% Alumina 10 8 0.6 ) UNIT V V mA mW EQUIVALENT CIRCUIT D G KTK5132U N CHANNEL MOS FIELD EFFECT TRANSISTOR A J G E MBM DIM MILLIMETERS DA 2.00+_ 0.20 2 B 1.25+_ 0.15 13 C 0.90+_ 0.10 D 0.3+0.10/-0.05 E 2.10 +_ 0.20 G 0.65 P H 0.15+0.1/-0.06 J 1.30 K 0.00~0.10 C L L HM 0.70 0.42 +_0.