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KTK5132S - N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Key Features

  • 2.5 Gate Drive. Low Threshold Voltage : Vth=0.5 High Speed. Small Package. Enhancement-Mode. 1.5V.

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Datasheet Details

Part number KTK5132S
Manufacturer KEC
File Size 749.18 KB
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KTK5132S Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES 2.5 Gate Drive. Low Threshold Voltage : Vth=0.5 High Speed. Small Package. Enhancement-Mode. 1.5V. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage Gate-Source Voltage VDS VGSS DC Drain Current ID Drain Power Dissipation PD Channel Temperature Tch Storage Temperature Range Tstg RATING 30 20 100 200 150 -55 150 UNIT V V mA mW EQUIVALENT CIRCUIT D G KTK5132S N CHANNEL MOS FIELD EFFECT TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. SOURCE 2.