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SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION.
FEATURES Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz). High Forward Transfer Admittance. : |yfs| =9mS(Typ.) Extremely Low Reverse Transfer Capacitance. : Crss=0.1pF(Typ.)
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VGDO IG PD Tj Tstg
RATING -18 10 150 150
-55 150
UNIT V mA mW
C N K J
A G H
D
KTK211
N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR
E L BL
2
3
1
P
P
M
1. GATE 2. DRAIN 3. SOURCE
DIM A B C D E G H J K L M N P
MILLIMETERS 2.93+_ 0.20
1.30+0.20/-0.15 1.30 MAX
0.45+0.15/-0.05 2.40+0.30/-0.20
1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.
KTK211 Datasheet
