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Etek Microelectronics
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Toshiba Semiconductor
2SK2013 - Silicon N Channel MOS Type Field Effect Transistor
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 2SK2013 Audio Frequency Power Amplifier Application z High breakdown voltage z H.
Fuji Electric
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2SK2018-01L,S FAP-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanch.
Panasonic
K2015 - Silicon N-Channel F-MOS FET
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Inchange Semiconductor
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Fenghua Advanced Technology
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FENGHUA ZINC OXIDE VARISTOR Fenghua (HK) Electronics Ltd. Unit 207, Fu Hang Industrial Building, No.1, Hok Yuen Street East, Hung Hom, Hong Kong Tel:.
ETC
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Fenghua Advanced Technology
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FENGHUA ZINC OXIDE VARISTOR Fenghua (HK) Electronics Ltd. Unit 207, Fu Hang Industrial Building, No.1, Hok Yuen Street East, Hung Hom, Hong Kong Tel:.
Sanyo Semicon Device
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Sanyo Semicon Device
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Fuji Electric
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2SK2018-01L,S FAP-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanch.
Fuji Electric
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2SK2019-01 FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante.
Panasonic
2SK2015 - Silicon N-Channel MOSFET
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Inchange Semiconductor
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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum .
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2SK2016 - Silicon N-Channel Power F-MOS
Power F-MOS FETs 2SK2016 Silicon N-Channel Power F-MOS s Features q Low ON-resistance RDS(on) : RDS(on)1= 0.315Ω(typ) q High-speed switching : tf= 3.
RICOH
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RP100x SERIES 0.6% ACCURACY LOW NOISE 200mA LDO REGULATOR NO.EA-140-160425 OUTLINE The RP100x Series are CMOS-based voltage regulator ICs with high ou.
