K20N60 Datasheet | Specifications & PDF Download

SKW20N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode  75% lower Eoff compared to previous generati

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AOK20N60L 600V,20A N-Channel MOSFET General Description Product Summary The AOK20N60L is fabricated using an advanced high voltage MOSFET process t

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DTK20N60SJ www.din-tek.jp N-Channel 600-V (D-S) Super Junction MOSFET PRODUCT SUMMARY VDS at TJ max. (V) 600 RDS(on) max. at 25 °C (Ω) VGS = 10 V

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TSA20N60S, TSK20N60S 600V N-Channel MOSFET TSA20N60S, TSK20N60S 600V N-Channel MOSFET September, 2013 SJ-FET Description SJ-FET is new generation o

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isc N-Channel MOSFET Transistor TK20N60W ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤ 155mΩ ·Easy to control Gate switching ·Enhancement mod

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isc N-Channel MOSFET Transistor AOK20N60L FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-R

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AOK20N60 600V,20A N-Channel MOSFET General Description The AOK20N60 is fabricated using an advanced high voltage MOSFET process that is designed to d

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WML20N60C2, WMK20N60C2, WMM20N60C2 WMN20N60C2, WMP20N60C2, WMO20N60C2 600V 0.26Ω Super Junction Power MOSFET Description WMOSTM C2 is Wayon’s 2nd gen

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isc N-Channel MOSFET Transistor TK20N60W5 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤ 175mΩ ·Easy to control Gate switching ·Enhancement mo

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MOSFETs Silicon N-Channel MOS (DTMOS) TK20N60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON)

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MOSFETs Silicon N-Channel MOS (DTMOS) TK20N60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 110

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