TK20N60W Datasheet - Toshiba

TK20N60W, Silicon N-Channel MOSFET

MOSFETs Silicon N-Channel MOS (DTMOS) TK20N60W 1.

Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.
) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK20N60W 1: Gate 2: Drain (Heatsink) 3: Source TO-247 4. A

TK20N60W_Toshiba.pdf