Datasheet Details
- Part number
- TK200F04N1L
- Manufacturer
- Toshiba ↗
- File Size
- 327.16 KB
- Datasheet
- TK200F04N1L-Toshiba.pdf
- Description
- Silicon N-Channel MOSFET
TK200F04N1L Description
MOSFETs Silicon N-channel MOS (U-MOS-H) TK200F04N1L 1.Applications * Automotive * Switching Voltage Regulators * DC-DC Conve.
TK200F04N1L Features
* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 0.78 mΩ (typ. ) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK200F04N1L
TO-220SM(W)
1: Gate 2: Drain (He
TK200F04N1L Applications
* Automotive
* Switching Voltage Regulators
* DC-DC Converters
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