TK20D60U Datasheet (Toshiba) - Field Effect Transistor

TK20D60U, Field Effect Transistor

TK20D60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ) TK20D60U Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.165Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) 10.0 ± 0.3 9.5 ± 0.2 A Ф3.65 ± 0.2 3.2 2.8 Unit: mm 0.6±0.1 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drai