TK20E60W5 Datasheet - Toshiba

TK20E60W5, N-Channel MOSFET

MOSFETs Silicon N-Channel MOS (DTMOS) TK20E60W5 1.

Features

* (1) Fast reverse recovery time: trr = 110 ns (typ.
) (2) Low drain-source on-resistance: RDS(ON) = 0.15 Ω (typ.
) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK20E60W5

TK20E60W5-Toshiba.pdf