TK20E60W5 - N-Channel MOSFET

Toshiba

Datasheet Details

(1) Fast reverse recovery time: trr = 110 ns (typ. ) (2) Low drain-source on-resistance: RDS(ON) = 0.15 Ω (typ. ) by used to Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK20E60W5 TO-220 1: Gate 2: Drain (Heatsink) 3: Source ©2015 Toshiba Corporation 1 Start of commercial production 2015-10 2015-10-22 Rev.3.0 TK20E60W5 4. Absolute Maximum Ratings (Note) (Ta = 25 unless o.

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Published: Nov 9, 2020 |