TK20A60W - Silicon N-Channel MOSFET
TK20A60W Features
* (1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK20A60W TO-220SIS 1: Gate 2: Drain 3: Source ©2016 Toshib
