TK20C60W - Silicon N-Channel MOSFET

Product Overview

Toshiba Semiconductor

Part number	TK20C60W
Manufacturer	Toshiba Semiconductor
File Size	270.09 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK20C60W Datasheet
Additional preview pages of the TK20C60W datasheet.

(1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK20C60W 1: Gate 2: Drain (Heatsink) 3: Source I2PAK 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 Drain current (DC) (Not.

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Published: Sep 10, 2014 |