Part number:
TK20G60W
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
241.88 KB
Description:
Silicon n-channel mosfet.
TK20G60W-ToshibaSemiconductor.pdf
Datasheet Details
TK20G60W Features
* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source D2PAK 4. Absolute Ma
TK20G60W-ToshibaSemiconductor.pdf
Datasheet Details
TK20G60W
Toshiba ↗ Semiconductor
241.88 KB
Silicon n-channel mosfet.
TK20G60W Distributor
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