TK20E60U - Silicon N-Channel MOSFET
TK20E60U Features
* (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.165 Ω (typ.) High forward transfer admittance: |Yfs| = 12 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain
