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TK20E60U Datasheet - Toshiba

TK20E60U Silicon N-Channel MOSFET

TK20E60U Features

* (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.165 Ω (typ.) High forward transfer admittance: |Yfs| = 12 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate (G) 2: Drain

TK20E60U_Toshiba.pdf

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Datasheet Details

Part number:

TK20E60U

Manufacturer:

Toshiba ↗

File Size:

271.68 KB

Description:

Silicon n-channel mosfet.

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TK20E60U TK20E60U Silicon N-Channel MOSFET Toshiba

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