K22E10N1 Datasheet | Specifications & PDF Download

K22E10N1-VB K22E10N1-VB Datasheet N-Channel 100-V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () a

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK22E10N1，ITK22E10N1 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤13.8mΩ. (VGS = 10 V)

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MOSFETs Silicon N-channel MOS (U-MOS-H) TK22E10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(

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