K22E10N1 N-Channel 100V MOSFET

VBsemi

Description

K22E10N1-VB K22E10N1-VB Datasheet N-Channel 100-V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () a.

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Datasheet Specifications

Part number: K22E10N1
Manufacturer: VBsemi
File Size: 259.00 KB
Datasheet: K22E10N1-VBsemi.pdf
Description: N-Channel 100V MOSFET

Features

* TrenchFET® Power MOSFET
* 175 °C Maximum Junction Temperature
* Compliant to RoHS Directive 2002/95/EC TO-220AB D GD S G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Volt

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K22E10N1 N-Channel 100V MOSFET VBsemi

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