TK22E10N1 - N-Channel MOSFET

INCHANGE

Datasheet Details

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Low drain-source on-resistance: RDS(on) ≤13.8mΩ. (VGS = 10 V).
Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ID=0.3mA).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Oct 4, 2020 |