TK20A60U Datasheet, Mosfet, INCHANGE

✔ TK20A60U Features

Low drain-source on-resistance: RDS(ON) = 0.165Ω (typ.)
Low leakage current: IDSS = 100μA (max) (VDS = 600 V)
Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA)

✔ TK20A60U Application

of our products. ISC products are intended for usage in general electronic equipment. The products are not d

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📄 Datasheet

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N-channel mosfet.

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Toshiba America Electronic Components

MOSFET N-CH 600V 20A TO220SIS

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TK20A60U(Q,M)

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TK20A60U N-Channel MOSFET INCHANGE