TK20A60U - N-Channel MOSFET
TK20A60U Features
* Low drain-source on-resistance: RDS(ON) = 0.165Ω (typ.)
* Low leakage current: IDSS = 100μA (max) (VDS = 600 V)
* Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
