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TK22A10N1

Silicon N-Channel MOSFET

TK22A10N1 Features

* (1) Low drain-source on-resistance: RDS(ON) = 11.5 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit TK22A10N1 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maxi

TK22A10N1 Datasheet (236.84 KB)

Preview of TK22A10N1 PDF

Datasheet Details

Part number:

TK22A10N1

Manufacturer:

Toshiba ↗

File Size:

236.84 KB

Description:

Silicon n-channel mosfet.

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TK22A10N1 Silicon N-Channel MOSFET Toshiba

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