TK22A65X - Silicon N-Channel MOSFET

Toshiba

Datasheet Details

(1) Low drain-source on-resistance: RDS(ON) = 0.12 Ω (typ. ) by using Super Junction Structure: DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.1 mA) 3. Packaging and Internal Circuit TK22A65X TO-220SIS 1: Gate 2: Drain 3: Source ©2016 Toshiba Corporation 1 Start of commercial production 2016-09 2016-08-05 Rev.3.0 TK22A65X 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit.

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Published: Jan 2, 2024 |