K2796 Datasheet | Specifications & PDF Download

2SK2796(L), 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.12Ω typ. • 4V gate drive devices

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isc N-Channel MOSFET Transistor 2SK2796L FEATURES ·Drain Current –ID= 16.9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-

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2SK2796(L), 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-534C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS(

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2SK2796(L), 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-534C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS(

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2SK2796(L), 2SK2796(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-534C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS(

(15 views)