K2980 Datasheet | Specifications & PDF Download

2SK2980 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.2 Ω typ. (VGS = 4 V, ID = 500 mA) • 2.5 V gate

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2SK2980 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.2 Ω typ. (VGS = 4 V, ID = 500 mA) • 2.5 V gate

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2SK2980 Silicon N Channel MOS FET High Speed Power Switching ADE-208-571B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0. 2 Ω ty

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