2SK2980 - Silicon N-Channel MOSFET

Hitachi Semiconductor

Datasheet Details

Part number	2SK2980
Manufacturer	Hitachi Semiconductor
File Size	43.36 KB
Description	Silicon N-Channel MOSFET
Datasheet	2SK2980_HitachiSemiconductor.pdf

Low on-resistance R DS(on) = 0. 2 Ω typ. (VGS = 4 V, I D = 500 mA).
2.5V gate drive devices.
Small package (MPAK) Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SK2980 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Symbol VDSS VGSS Ratings 30 +12.
10 Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: ID I D(pulse) Pch Tch Tstg Note1 Note2 Unit V V V A A W °.

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Published: Mar 30, 2005 |