2SK2980
Hitachi Semiconductor
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Silicon n-channel mosfet.
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• Low on-resistance RDS(on) = 0.2 Ω typ. (VGS = 4 V, ID = 500 mA)
• 2.5 V gate .
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2SK2900-01 - N-channel MOS-FET
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> Features
- High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated
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FAP-IIIB Series
N-channel MO.
2SK2901-01L - N-CHANNEL SILICON POWER MOS-FET
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High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
.