2SK2986 Silicon N Channel MOS Type Field Effect Transistor

Toshiba Semiconductor

Description

2SK2986 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U *MOSII) 2SK2986 DC *DC Converter, Relay Drive and Motor Drive App.

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Datasheet Specifications

Part number: 2SK2986
Manufacturer: Toshiba ↗ Semiconductor
File Size: 455.19 KB
Datasheet: 2SK2986_ToshibaSemiconductor.pdf
Description: Silicon N Channel MOS Type Field Effect Transistor

Features

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* Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limita

Applications

* Unit: mm z Low drain
* source ON resistance : RDS (ON) = 4.5 mΩ (typ. ) z High forward transfer admittance : |Yfs| = 80 S (typ. ) z Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) z Enhancement mode : Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C)

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2SK2986 Silicon Channel MOS Type Field Effect Transistor Toshiba Semiconductor

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