2SK2986 Datasheet - Toshiba Semiconductor

2SK2986 Silicon N Channel MOS Type Field Effect Transistor

2SK2986 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSII) 2SK2986 DC DC Converter, Relay Drive and Motor Drive Applications Unit: mm z Low drain source ON resistance : RDS (ON) = 4.5 mΩ (typ.) z High forward transfer admittance : |Yfs| = 80 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) z Enhancement mode : Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit .

2SK2986 Features

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2SK2986 Datasheet (455.19 KB)