2SK2983 Datasheet, Fet, NEC

2SK2983 Features

• Fet
• Low on-resistance RDS(on)1 = 20 mΩ (MAX.) (VGS = 10 V, ID = 15 A) RDS(on)2 = 27 mΩ (MAX.) (VGS = 4.5 V, ID = 15 A)
• Low Ciss Ciss = 1200 pF TYP.
• Built-in ga

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Part number:

2SK2983

Manufacturer:

NEC

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📄 Datasheet

Description:

Switching n-channel power mos fet. This product is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES

Low on-res

2SK2983 Application

• Applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a

TAGS

2SK2983

NEC

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