2SK2981 - SWITCHING N-CHANNEL POWER MOS FET

Datasheet Details

Part number	2SK2981
Manufacturer	NEC
File Size	59.46 KB
Description	SWITCHING N-CHANNEL POWER MOS FET
Datasheet	2SK2981_NEC.pdf

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.

6.5 ±0.2 5.0 ±0.2 1.6 ±0.2 1.5.
0.1.
Low on-resistance RDS(on)1 = 27 mΩ (MAX. ) (VGS = 10 V, ID = 10 A) RDS(on)2 = 40 mΩ (MAX. ) (VGS = 4.5 V, ID = 10 A) RDS(on)3 = 50 mΩ (MAX. ) (VGS = 4 V, ID = 10 A).
Low Ciss : Ciss = 860 pF (TYP. ).
Built-in gate protection diode +0.2 2.3 ±0.2 0.5 ±0.1 4 1 2 3 1.3 MAX. 7.0 MIN. 5.5 ±0.2 13.7 MIN. 0.6 ±0.1 2.3 2.3 0.6 ±0.1.

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Published: Mar 30, 2005 |