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2SK2987 Datasheet - Toshiba Semiconductor

2SK2987_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SK2987

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

260.28 KB

Description:

Silicon n channel mos type field effect transistor.

2SK2987, Silicon N Channel MOS Type Field Effect Transistor

2SK2987 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSII) 2SK2987 DC DC Converter, Relay Drive and Motor Drive Applications Unit: mm l Low drain source ON resistance : RDS (ON) = 4.5 mΩ (typ.) l High forward transfer admittance : |Yfs| = 80 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 60 V) l Enhancement mode : Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain source voltage D

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