2SK2987 Silicon N Channel MOS Type Field Effect Transistor

Toshiba Semiconductor

Description

2SK2987 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U *MOSII) 2SK2987 DC *DC Converter, Relay Drive and Motor Drive App.

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Datasheet Specifications

Part number: 2SK2987
Manufacturer: Toshiba ↗ Semiconductor
File Size: 260.28 KB
Datasheet: 2SK2987_ToshibaSemiconductor.pdf
Description: Silicon N Channel MOS Type Field Effect Transistor

Applications

* Unit: mm l Low drain
* source ON resistance : RDS (ON) = 4.5 mΩ (typ. ) l High forward transfer admittance : |Yfs| = 80 S (typ. ) l Low leakage current : IDSS = 100 µA (max) (VDS = 60 V) l Enhancement
* mode : Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characte

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2SK2987 Silicon Channel MOS Type Field Effect Transistor Toshiba Semiconductor

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